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2SD1758 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

부품명 2SD1758
상세설명  NPN Transistors
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제조업체  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
홈페이지  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD1758 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SD1758_15 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SD1758_15 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
Transistors
NPN Transistors
2SD1758
Features
Low VCE (sat)
Complementary to 2SB1182
2.3
0.60+ 0.1
- 0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4 .60 +0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.127
max
TO-252
Unit: mm
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
40
Collector - Emitter Voltage
VCEO
32
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
2
Collector Current - Pulse
ICP
2.5
Collector Power Dissipation
Tc=25°C
PC
10
W
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
A
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= 100 uA, IE= 0
40
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA,IB= 0
32
Emitter - base breakdown voltage
VEBO
IE= 100 uA, IC= 0
5
Collector-base cut-off current
ICBO
VCB= 30 V , IE= 0
1
Emitter cut-off current
IEBO
VEB= 4V , IC=0
0.5
Collector-emitter saturation voltage
VCE(sat) IC=2 A, IB=200 mA
0.5
0.8
Base - emitter saturation voltage
VBE(sat) IC=2 A, IB=200 mA
1.2
DC current gain
hFE
VCE= 3V, IC= 500 mA
120
390
Collector Output capacitance
Cob
VCB= 10V, IE= 0,f=1MHz
30
pF
Transition frequency
fT
VCE= 5 V, IE= -50mA,f=100MHz
100
MHz
V
V
uA
Classification of hfe
Type
2SD1758-Q
2SD1758-R
Range
120-270
180-390


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