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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SI2328DS 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2328DS 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 4 page  SMD Type www.kexin.com.cn 1 MOSFET N-Channel Enhancement MOSFET SI2328DS (KI2328DS) ■ Features ● VDS (V) = 100V ● ID = 1.5 A (VGS = 10V) ● RDS(ON) ＜ 250mΩ (VGS = 4.5V) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Gate 2.Source 3.Drain 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 G S D 2 3 1 ■ Absolute Maximum Ratings Ta = 25℃ Symbol 5 sec Steady State Unit VDS VGS Ta=25℃ 1.5 1.15 Ta=70℃ 1.2 0.92 IDM Avalanche Current *2 IAS Single Avalanche Energy EAS mJ Ta=25℃ 1.25 0.73 Ta=70℃ 0.8 0.47 RthJF TJ Tstg Power Dissipation *1 Thermal Resistance.Junction- to-Ambient *1 t≤5 sec Steady State tate Thermal Resistance.Junction-to-Foot V Pulsed Drain Current *2 A 100 ±20 6 6 L=0.1mH 1.8 Parameter Continuous Drain Current *1 ID Drain-Source Voltage Gate-Source Voltage ℃ /W ℃ Junction Temperature Storage Temperature Range 55 150 -55 to 150 W RthJA 100 170 PD *1 Surface Mounted on 1” x 1” FR4 Board. *2 Pulse width limited by maximum junction temperature |
유사한 부품 번호 - SI2328DS |
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유사한 설명 - SI2328DS |
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