MTBA6C12Q8-0-T3-G datasheet(4/12 Pages) CYSTEKEC

부품명	MTBA6C12Q8-0-T3-G

상세설명	N- AND P-Channel Logic Level Enhancement Mode MOSFET

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제조업체	CYSTEKEC [Cystech Electonics Corp.]

홈페이지	http://www.cystekec.com

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4 / 12 page

CYStech Electronics Corp.

Spec. No. : C973Q8

Issued Date : 2014.09.23

Revised Date :

Page No. : 4/12

MTBA6C12Q8

CYStek Product Specification

Typical Characteristics : Q1( N-channel )

Typical Output Characteristics

0

2

4

6

8

10

012

345

VDS, Drain-Source Voltage(V)

VGS=2.5V

10V, 9V, 8V, 7V, 6V, 5V,4V,3.5V,3V

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25

0

25 50

75 100 125 150 175 200

Tj, Junction Temperature(°C)

ID=250μA,

VGS=0V

Static Drain-Source On-State resistance vs Drain Current

10

100

1000

0.01

0.1

1

10

100

ID, Drain Current(A)

VGS=2.5V

VGS=3V

VGS=4.5V

10V

Reverse Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

02468

1

IDR, Reverse Drain Current(A)

0

Tj=25°C

Tj=150°C

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

50

100

150

200

250

300

350

400

450

500

02

4

6

8

10

Drain-Source On-State Resistance vs Junction Tempearture

0.4

0.8

1.2

1.6

2

2.4

2.8

-75 -50 -25

0

25 50

75 100 125 150 175 200

Tj, Junction Temperature(°C)

VGS=10V, ID=2A

RDS(ON)@Tj=25°C : 178mΩ typ.

VGS, Gate-Source Voltage(V)

ID=2A

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