전자부품 데이터시트 검색엔진 |
|
FDN5630-3 데이터시트(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
|
FDN5630-3 데이터시트(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
4 / 4 page SMD Type www.kexin.com.cn 4 MOSFET . N-Channel MOSFET FDN5630 (KDN5630) ■ Typical Characterisitics Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) R (t) = r(t) * R R = 270 C/W Duty Cycle, D = t /t 1 2 JA JA JA T - T = P * R (t) JA A J P(pk) t1 t2 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 0 4 8 12 16 20 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE R JA=270 oC/W TA=25 oC 0 2 4 6 8 10 0 2 4 6 8 Qg, GATE CHARGE (nC) ID = 1.7A VDS = 10V 20V 30V 0 100 200 300 400 500 600 0 10 20 30 40 50 60 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V 0.01 0.1 1 10 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 10ms 1ms 100 s RDS(ON) LIMIT VGS = 10V SINGLE PULSE R JA = 270oC/W TA = 25oC |
유사한 부품 번호 - FDN5630-3 |
|
유사한 설명 - FDN5630-3 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |