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IRF246 데이터시트(PDF) 3 Page - Intersil Corporation

부품명 IRF246
상세설명  14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF246 데이터시트(HTML) 3 Page - Intersil Corporation

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5-3
IRF244, IRF245, IRF246, IRF247
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz
(Figure 11)
-
1300
-
pF
Output Capacitance
COSS
-
320
-
pF
Reverse-Transfer Capacitance
CRSS
-69-
pF
Internal Drain Inductance
LD
Measured Between
the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured From The
Source Lead, 6mm
(0.25in) From the
Flange and the
Source Bonding Pad
-
12.5
-
nH
Junction to Case
RθJC
-
-
1.0
oC/W
Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
ISD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
14
A
Pulse Source to Drain Current
(Note 3)
ISM
-
-
56
A
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25
oC, I
SD = 14A, VGS = 0V (Figure 13)
-
-
1.8
V
Reverse Recovery Time
trr
TJ = 25
oC, I
SD = 14A, dISD/dt = 100A/µs
150
300
640
ns
Reverse Recovered Charge
QRR
TJ = 25
oC, I
SD = 14A, dISD/dt = 100A/µs
1.6
3.4
7.2
µC
Forward Turn-On Time
tON
Intrinsic Turn-On Time is Negligible, Turn-On
Speed is Substantially Controlled by LS + LD
--
-
-
NOTES:
2. Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25
oC, L = 4.5mH, R
G = 25Ω, peak IAS = 14A. See Figures 15, 16.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
LS
LD
G
D
S
G
D
S


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