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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF323 데이터시트(PDF) 2 Page - Intersil Corporation |
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IRF323 데이터시트(HTML) 2 Page - Intersil Corporation |
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2 / 7 page  5-2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRF320 IRF321 IRF322 IRF323 UNITS Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS 400 350 400 350 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR 400 350 400 350 V Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 3.3 2.1 3.3 2.1 2.8 1.8 2.8 1.8 A A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM 13 13 11 11 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD 50 50 50 50 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 0.4 0.4 0.4 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS 190 190 190 190 mJ Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See TB334 . . . . . . . . . . . . . . . Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10) IRF320, IRF322 400 - - V IRF321, IRF323 350 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) IRF320, IRF321 3.3 - - A IRF322, IRF323 2.8 - - A Gate to Source Leakage Current IGSS VGS = ±20V ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 1.8A, VGS = 10V, (Figures 8, 9) IRF320, IRF321 - 1.5 1.8 Ω IRF322, IRF323 - 1.8 2.5 Ω Forward Transconductance (Note 2) gfs VDS ≥ 10V, ID = 2.0A, (Figure 12) 1.7 2.7 - S Turn-On Delay Time td(ON) VDD = 200V, ID ≈ 3.3A, RG = 18Ω, RL = 60Ω, VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature -10 15 ns Rise Time tr -14 20 ns Turn-Off Delay Time td(OFF) -30 45 ns Fall Time tf -13 20 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature -12 20 nC Gate to Source Charge Qgs -4 - nC Gate to Drain “Miller” Charge Qgd -8 - nC IRF320, IRF321, IRF322, IRF323 |
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