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SI2301BDS-3 데이터시트(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

부품명 SI2301BDS-3
상세설명  P-Channel Enhancement MOSFET
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제조업체  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
홈페이지  http://www.kexin.com.cn/index.asp
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MOSFET
P-Channel Enhancement MOSFET
SI2301BDS (KI2301BDS)
Typical Characterisitics
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
0
1
2
3
4
5
0
1
2
3
4
5
0
200
400
600
800
0
4
8
12
16
20
0.0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
10
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
0
1
2
3
4
5
On-Resistance vs. Drain Current
s
c
it
s
ir
e
t
c
a
r
a
h
C
r
e
f
s
n
a
r
T
s
c
it
s
ir
e
t
c
a
r
a
h
C
t
u
p
t
u
O
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
T C = -55 C
125 C
V GS = 5 thru 2.5 V
1.5 V
2 V
Gate Charge
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
C rss
C oss
C iss
V DS = 10 V
ID = 2.8 A
I D - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V GS = 4.5 V
ID = 2.8 A
TJ - Junction Temperature ( C)
V GS = 2.5 V
V GS = 4.5 V
25 C
1 V


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