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SI2301BDS-3 데이터시트(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2301BDS-3 데이터시트(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
3 / 5 page SMD Type www.kexin.com.cn 3 MOSFET P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) ■ Typical Characterisitics 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 1 2 3 4 5 0 1 2 3 4 5 0 200 400 600 800 0 4 8 12 16 20 0.0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 0 1 2 3 4 5 On-Resistance vs. Drain Current s c it s ir e t c a r a h C r e f s n a r T s c it s ir e t c a r a h C t u p t u O VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) T C = -55 C 125 C V GS = 5 thru 2.5 V 1.5 V 2 V Gate Charge Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) C rss C oss C iss V DS = 10 V ID = 2.8 A I D - Drain Current (A) Capacitance On-Resistance vs. Junction Temperature V GS = 4.5 V ID = 2.8 A TJ - Junction Temperature ( C) V GS = 2.5 V V GS = 4.5 V 25 C 1 V 。 |
유사한 부품 번호 - SI2301BDS-3 |
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유사한 설명 - SI2301BDS-3 |
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