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IRFP240 데이터시트(PDF) 2 Page - Intersil Corporation

부품명 IRFP240
상세설명  20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP240 데이터시트(HTML) 2 Page - Intersil Corporation

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4-318
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFP240
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
200
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
20
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
80
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
510
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA (Figure 10)
200
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 11V (Figure 7)
20
-
-
A
Gate to Source Leakage
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
VGS = 10V, ID = 10A (Figures 8, 9)
-
0.14
0.18
Forward Transconductance (Note 2)
gfs
VDS ≥ 10V, ID = 11A
6.7
11
-
S
Turn-On Delay Time
td(ON)
VDD = 100V, ID 18A, RGS = 9.1Ω, VGS = 10V,
RL = 5.4Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-14
21
ns
Rise Time
tr
-51
77
ns
Turn-Off Delay Time
td(OFF)
-45
68
ns
Fall Time
tf
-36
54
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 18A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
-43
60nC
Gate to Source Charge
Qgs
-10
-
nC
Gate to Drain “Miller” Charge
Qgd
-32
-
nC
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
1275
-
pF
Output Capacitance
COSS
-
500
-
pF
Reverse Transfer Capacitance
CRSS
-
160
-
pF
Internal Drain Inductance
LD
Measured between the
Contact Screw on
Header that is Closer to
Source and Gate Pins
and Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured from the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
-
12.5
-
nH
Junction to Case
RθJC
-
-
0.83
oC/W
Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
LS
LD
G
D
S
IRFP240


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