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IRFP244 데이터시트(PDF) 2 Page - Intersil Corporation |
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IRFP244 데이터시트(HTML) 2 Page - Intersil Corporation |
2 / 7 page 5-2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRFP244 IRFP245 IRFP246 IRFP247 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS 250 250 275 275 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . .VDGR 250 250 275 275 V Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 15 14 15 14 A TC = 100 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 9.7 8.8 9.7 8.8 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM 60 56 60 56 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 150 150 150 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 1.2 1.2 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS 550 550 550 550 mJ Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA (Figure 10) IRFP244, IRFP245 250 - - V IRFP246, IRFP247 275 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) IRFP244, IRFP246 15 - - A IRFP245, IRFP247 14 - - A Gate to Source Leakage IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 10A (Figures 8, 9) IRFP244, IRFP246 - 0.20 0.28 Ω IRFP245, IRFP247 - 0.24 0.34 Ω Forward Transconductance (Note 2) gfs VDS ≥ 50V, ID = 10A (Figure 12) 6.7 11 - S Turn-On Delay Time td(ON) VDD = 125V, ID ≈ 15A, RG = 9.1Ω, VGS = 10V, RL = 8Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature -16 24 ns Rise Time tr - 67 100 ns Turn-Off Delay Time td(OFF) -53 80 ns Fall Time tf -49 74 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 15A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20) Gate charge is Essentially Independent of Operating Temperature -39 59 nC Gate to Source Charge Qgs - 6.6 - nC Gate to Drain “Miller” Charge Qgd -20 - nC IRFP244, IRFP245, IRFP246, IRFP247 |
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