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IRFP244 데이터시트(PDF) 3 Page - Intersil Corporation

부품명 IRFP244
상세설명  15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP244 데이터시트(HTML) 3 Page - Intersil Corporation

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5-3
IRFP244, IRFP245, IRFP246, IRFP247
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz
(Figure 11)
-
1300
-
pF
Output Capacitance
COSS
-
320
-
pF
Reverse Transfer Capacitance
CRSS
-69
-
pF
Internal Drain Inductance
LD
Measured fRom the
Drain Lead, 6mm
(0.25in) From Pack-
age to the Center of
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured from The
Source Lead, 6mm
(0.25in) from the
Header to the Source
Bonding Pad
-
12.5
-
nH
Junction to Case
RθJC
-
-
0.83
oC/W
Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
ISD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
15
A
Pulse Source to Drain Current
(Note 3)
ISDM
-
-
60
A
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25
oC, I
SD = 15A, VGS = 0V (Figure 13)
-
-
1.8
V
Reverse Recovery Time
trr
TJ = 25
oC, I
SD = 14A, dISD/dt = 100A/µs
150
300
640
ns
Reverse Recovered Charge
QRR
TJ = 25
oC, I
SD = 14A, dISD/dt = 100A/µs
1.6
3.4
7.2
µC
NOTES:
2. Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25
oC, L = 4.0µH, RG = 25Ω, peak IAS = 15A. See Figures 15, 16.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
LS
LD
G
D
S
G
D
S


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