전자부품 데이터시트 검색엔진 |
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IRFP350 데이터시트(PDF) 5 Page - Intersil Corporation |
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IRFP350 데이터시트(HTML) 5 Page - Intersil Corporation |
5 / 7 page 4-339 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE Typical Performance Curves Unless Otherwise Specified (Continued) 1.25 1.05 0.85 60 -60 TJ, JUNCTION TEMPERATURE ( oC) 1.15 0.95 0.75 -20 20 100 160 0 -40 40 80 120 140 ID = 250µA 12 10 2 5 102 VDS, DRAIN TO SOURCE VOLTAGE (V) 5000 4000 3000 2000 1000 0 5 CRSS CISS COSS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS ID, DRAIN CURRENT (A) 510 15 20 025 25 20 15 0 10 5 TJ = 150 oC TJ = 25 oC PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDS = 2 x VGS VSD, SOURCE TO DRAIN VOLTAGE (V) 102 10 1 0.1 0 0.4 0.8 1.2 1.6 2.0 TJ = 25 oC TJ = 150 oC PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX Qg, GATE CHARGE (nC) 30 60 90 120 0 150 4 20 8 16 VDS = 320V ID = 16A VDS = 200V VDS = 80V 12 0 IRFP350 |
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