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IRFP350 데이터시트(PDF) 3 Page - Intersil Corporation

부품명 IRFP350
상세설명  16A, 400V, 0.300 Ohm, N-Channel Power MOSFET
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP350 데이터시트(HTML) 3 Page - Intersil Corporation

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4-337
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
ISD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
16
A
Pulse Source to Drain Current
(Note 3)
ISDM
-
-
64
A
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25
oC, I
SD = 16A, VGS = 0V (Figure 13)
-
-
1.6
V
Reverse Recovery Time
trr
TJ = 150
oC, I
SD = 15A, dISD/dt = 100A/µs
270
-
1300
ns
Reverse Recovered Charge
QRR
TJ = 150
oC, I
SD = 15A, dISD/dt = 100A/µs
1.7
-
8.1
µC
NOTES:
2. Pulse Test: Pulse width
≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 40V, starting TJ = 25
oC, L = 5.66mH, R
G = 50Ω, peak IAS = 15A.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
TC, CASE TEMPERATURE (
oC)
0.2
0.4
0.6
0.8
1.0
1.2
TC, CASE TEMPERATURE (
oC)
50
75
100
25
150
20
16
12
0
8
4
125
1
0.1
10-2
10-2
10-5
10-4
10-3
0.1
1
10
t1, RECTANGULAR PULSE DURATION (S)
10-3
DUTY FACTOR: D = t1/t2
t2
PDM
t1
NOTES:
t2
PEAK TJ = PDM x ZθJC x RθJC +TC
SINGLE PULSE
0.2
0.1
0.05
0.01
0.02
0.5
IRFP350


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