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IRFP360 데이터시트(PDF) 1 Page - Intersil Corporation

부품명 IRFP360
상세설명  23A, 400V, 0.200 Ohm, N-Channel Power MOSFET
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP360 데이터시트(HTML) 1 Page - Intersil Corporation

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4-341
File Number
2290.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright
© Intersil Corporation 1999
IRFP360
23A, 400V, 0.200 Ohm, N-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17464.
Features
• 23A, 400V
•rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP360
TO-247
IRFP360
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
Data Sheet
July 1999


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