전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

IRFP360 데이터시트(PDF) 2 Page - Intersil Corporation

부품명 IRFP360
상세설명  23A, 400V, 0.200 Ohm, N-Channel Power MOSFET
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP360 데이터시트(HTML) 2 Page - Intersil Corporation

  IRFP360 Datasheet HTML 1Page - Intersil Corporation IRFP360 Datasheet HTML 2Page - Intersil Corporation IRFP360 Datasheet HTML 3Page - Intersil Corporation IRFP360 Datasheet HTML 4Page - Intersil Corporation IRFP360 Datasheet HTML 5Page - Intersil Corporation IRFP360 Datasheet HTML 6Page - Intersil Corporation IRFP360 Datasheet HTML 7Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
4-342
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFP360
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
400
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
400
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
23
14
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
92
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
250
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
1200
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
300
260
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 10)
400
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA2
-
4
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
23
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
On Resistance (Note 2)
rDS(ON)
ID = 13A, VGS = 10V (Figures 8, 9)
-
0.18
0.20
Forward Transconductance (Note 2)
gfs
VDS ≥ 50V, IDS > 13A (Figure 12)
14
21
-
S
Turn-On Delay Time
td(ON)
VDD = 200V, ID ≈ 25A, RGS = 4.3Ω, VGS = 10V,
RL = 7.5Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-22
33
ns
Rise Time
tr
-
94
140
ns
Turn-Off Delay Time
td(OFF)
-
80
120
ns
Fall Time
tf
-66
99
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 25A, VDS = 0.8 x Rated BVDSS
IG(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
-
68
100
nC
Gate to Source Charge
Qgs
-17
-
nC
Gate to Drain “Miller” Charge
Qgd
-24
-
nC
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
-
4000
-
pF
Output Capacitance
COSS
-
550
-
pF
Reverse Transfer Capacitance
CRSS
-97
-
pF
Internal Drain Inductance
LD
Measured between the
Contact Screw on Header
closer to Source and Gate
Pins and Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured from the Source
Lead, 6mm (0.25in) from
Header and Source
Bonding Pad
-13
-
nH
Thermal Resistance Junction to Case
RθJC
-
-
0.50
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
LS
LD
G
D
S
IRFP360


유사한 부품 번호 - IRFP360

제조업체부품명데이터시트상세설명
logo
International Rectifier
IRFP360 IRF-IRFP360 Datasheet
164Kb / 6P
   Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)
logo
Vishay Siliconix
IRFP360 VISHAY-IRFP360 Datasheet
962Kb / 8P
   Power MOSFET
S-81377-Rev. A, 30-Jun-08
logo
IXYS Corporation
IRFP360 IXYS-IRFP360 Datasheet
50Kb / 2P
   MegaMOS FET
logo
New Jersey Semi-Conduct...
IRFP360 NJSEMI-IRFP360 Datasheet
640Kb / 2P
   Avalanche-Energy-Rated N-Channel Power MOSFETs
logo
Inchange Semiconductor ...
IRFP360 ISC-IRFP360 Datasheet
67Kb / 2P
   isc N-Channel MOSFET Transistor
More results

유사한 설명 - IRFP360

제조업체부품명데이터시트상세설명
logo
Unisonic Technologies
20N40 UTC-20N40 Datasheet
201Kb / 6P
   400V, 23A N-CHANNEL POWER MOSFET
logo
Shindengen Electric Mfg...
P23F40HP2FM SHINDENGEN-P23F40HP2FM Datasheet
1Mb / 8P
   Power MOSFETs 400V, 23A, N-channel
logo
Fairchild Semiconductor
FDA24N40F FAIRCHILD-FDA24N40F Datasheet
682Kb / 8P
   N-Channel MOSFET, FRFET 400V, 23A, 0.19廓
logo
Intersil Corporation
JANSR2N7294 INTERSIL-JANSR2N7294 Datasheet
48Kb / 7P
   23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET
logo
Unisonic Technologies
UFP254 UTC-UFP254 Datasheet
132Kb / 3P
   23A, 250V N-CHANNEL POWER MOSFET
logo
Intersil Corporation
IRF730 INTERSIL-IRF730 Datasheet
54Kb / 7P
   5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
July 1999
logo
Unisonic Technologies
UF730 UTC-UF730 Datasheet
167Kb / 6P
   5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET
logo
Intersil Corporation
BUZ76A INTERSIL-BUZ76A Datasheet
42Kb / 5P
   2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET
October 1998
logo
Unisonic Technologies
UF740 UTC-UF740 Datasheet
163Kb / 6P
   10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET
logo
Intersil Corporation
BUZ351 INTERSIL-BUZ351 Datasheet
10Kb / 1P
   11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET
October 1998
More results


Html Pages

1 2 3 4 5 6 7


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com