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IRFP360 데이터시트(PDF) 3 Page - Intersil Corporation

부품명 IRFP360
상세설명  23A, 400V, 0.200 Ohm, N-Channel Power MOSFET
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP360 데이터시트(HTML) 3 Page - Intersil Corporation

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Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
ISD
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
-
-
23
A
Pulse Source to Drain Current (Note 2)
ISDM
-
-
92
A
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25
oC, I
SD = 23A, VGS = 0V (Figure 13)
-
-
1.8
V
Reverse Recovery Time
trr
TJ = 25
oC, I
SD = 25A, dISD/dt = 100A/µs
200
460
1000
ns
Reverse Recovery Charge
QRR
TJ = 25
oC, I
SD = 25A, dISD/dt = 100A/µs
3.1
7.1
16
µC
NOTES:
2. Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25
oC, L = 4mH, R
G = 25Ω, Peak IAS = 23A.
G
D
S
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. TRANSIENT THERMAL IMPEDANCE
0
50
100
150
0
TC, CASE TEMPERATURE (
oC)
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
TC, CASE TEMPERATURE (
oC)
150
25
75
125
25
20
15
10
5
1
0.1
10-3
10-5
10-4
10-3
10-2
0.1
1
10
t1, RECTANGULAR PULSE DURATION (S)
SINGLE PULSE
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
t1
t2
0.1
0.02
0.2
0.5
0.01
0.05
10-2
IRFP360


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