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IRFP440 데이터시트(PDF) 2 Page - Intersil Corporation

부품명 IRFP440
상세설명  8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP440 데이터시트(HTML) 2 Page - Intersil Corporation

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4-348
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFP440
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
500
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
500
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
8.8
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
5.6
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
35
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
480
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA (Figure 10)
500
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
8.8
-
-
A
Gate to Source Leakage
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
VGS = 10V, ID = 4.9A (Figures 8, 9)
-
0.800
0.850
Forward Transconductance (Note 2)
gfs
VDS ≥ 50V, ID = 4.9A (Figure 12)
5.3
8.2
-
S
Turn-On Delay Time
td(ON)
VDD = 250V, ID 8A, RGS = 9.1Ω, RL = 30.1Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-17
21
ns
Rise Time
tr
-23
35
ns
Turn-Off Delay Time
td(OFF)
-42
74
ns
Fall Time
tf
-18
30
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg
VGS = 10V, ID = 8A, VDS = 0.8 x Rated BVDSS
Ig(REF) = 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
-42
63
nC
Gate to Source Charge
Qgs
-7
-
nC
Gate to Drain “Miller” Charge
Qgd
-22
-
nC
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
1225
-
pF
Output Capacitance
COSS
-
200
-
pF
Reverse-Transfer Capacitance
CRSS
-85
-
pF
Internal Drain Inductance
LD
Measured from the drain
Lead, 6mm (0.25in) from
the Package to the
Center of the Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured from the
Source Lead, 6mm
(0.25in) from Header to
the Source Bonding Pad
-
12.5
-
nH
Junction to Case
RθJC
-
-
0.83
oC/W
Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
LS
LD
G
D
S
IRFP440


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