전자부품 데이터시트 검색엔진 |
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IRFP460 데이터시트(PDF) 5 Page - Intersil Corporation |
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IRFP460 데이터시트(HTML) 5 Page - Intersil Corporation |
5 / 7 page 4-363 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE Typical Performance Curves Unless Otherwise Specified (Continued) 1.25 1.05 0.95 0.85 0.75 -40 0 40 TJ, JUNCTION TEMPERATURE ( oC) 120 1.15 80 ID = 250µA 160 VDS, DRAIN TO SOURCE VOLTAGE (V) 10000 8000 6000 4000 2000 0 12 5 10 2 5 102 CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD VGS = 0V, f = 1MHz CISS COSS CRSS 40 32 24 16 8 0 0 8 16 24 32 40 ID, DRAIN CURRENT (A) TJ = 150 oC TJ = 25 oC PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDS ≥ 50V 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE TO DRAIN VOLTAGE (V) 102 5 2 10 5 2 1 5 2 0.1 TJ = 150 oC TJ = 25 oC PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 40 80 120 160 200 ID = 21A Qg, GATE CHARGE (nC) 20 16 12 8 4 0 VDS = 250V VDS = 400V VDS = 100V IRFP460 |
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