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IRFP460 데이터시트(PDF) 2 Page - Intersil Corporation |
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IRFP460 데이터시트(HTML) 2 Page - Intersil Corporation |
2 / 7 page 4-360 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRFP460 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 500 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 500 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 20 12 A A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 80 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 250 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 W/oC Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 960 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to T J = 125 oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 500 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA2 - 4 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 20 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 11A, VGS = 10V (Figures 8, 9) - 0.24 0.27 Ω Forward Transconductance (Note 2) gfs VDS ≥ 50V, IDS > 11A (Figure 12) 13 19 - S Turn-On Delay Time td(ON) VDD = 250V, ID = 21A, RGS = 4.3Ω, RD = 12Ω, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature -23 35 ns Rise Time tr - 81 120 ns Turn-Off Delay Time td(OFF) - 85 130 ns Fall Time tf -65 98 ns Total Gate Charge (Gate to Source + Gate-Drain) Qg(TOT) VGS = 10V, ID = 21A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figure 14). Gate Charge is Essentially Independent of OperatingTemperature - 120 190 nC Gate to Source Charge Qgs -18 - nC Gate to Drain “Miller” Charge Qgd -62 - nC Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 4100 - pF Output Capacitance COSS - 480 - pF Reverse Transfer Capacitance CRSS -84 - pF Internal Drain Inductance LD Measured from the Drain Lead, 6mm (0.25in) from Package to Center of Die Modified MOSFET Symbol Showing the Internal Device Inductances - 5.0 - nH Internal Source Inductance LS Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad -13 - nH Thermal Resistance Junction to Case RθJC - - 0.50 oC/W Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 30 oC/W LS LD G D S IRFP460 |
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