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IRFP9140 데이터시트(PDF) 2 Page - Intersil Corporation |
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IRFP9140 데이터시트(HTML) 2 Page - Intersil Corporation |
2 / 7 page 4-58 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRFP9140 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS -100 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC =100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DM -19 -12 A A Pulsed Drain (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM -76 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas 960 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA, (Figure 10) -100 - - V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = -250µA -2.0 - -4.0 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX,VGS = -10V -19 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) VGS = -10V, ID = -10A, (Figures 8, 9) - 0.14 0.20 Ω Forward Transconductance (Note 2) gfs VDS ≤ -50V, ID = -10A, (Figure 12) 5.3 7.9 - S Turn-On Delay Time td(ON) VDD = -50V, ID ≈ -19A, RG = 9.1Ω, RL = 2.5Ω, VGS = -10V, (Figures 17, 18) MOSFET Switching Times Are Essentially Indepen- dent of Operating Temperature - 16 20 ns Rise Time tr - 65 100 ns Turn-Off Delay Time td(OFF) -47 70 ns Fall Time tf -28 70 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS, IG(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature -37 55 nC Gate to Source Charge Qgs - 8.7 - nC Gate to Drain “Miller” Charge Qgd -22- nC Input Capacitance CISS VGS = 0V, VDS = -25V, f = 1.0MHz, (Figure 11) - 1200 - pF Output Capacitance COSS - 570 - pF Reverse Transfer Capacitance CRSS - 160 - pF Internal Drain Inductance LD Measured Between Contact Screw on Header That Is Closer to Source and Gate Pins and Center of Die Modified MOSFET Symbol Showing the In- ternal Device Induc- tances - 5.0 - nH Internal Source Inductance LS Measured From the Source Pin, 6mm (0.25in) From Header and Source Bond- ing Pad -13- nH Junction to Case RθJC - - 0.83 oC/W Junction to Ambient RθJA Free Air Operation - - 30 0C/W LS LD G D S IRFP9140 |
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