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IRFP9140 데이터시트(PDF) 2 Page - Intersil Corporation

부품명 IRFP9140
상세설명  19A, 100V, 0.200 Ohm, P-Channel Power MOSFET
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP9140 데이터시트(HTML) 2 Page - Intersil Corporation

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4-58
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFP9140
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
-100
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
-100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC =100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
-19
-12
A
A
Pulsed Drain (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
-76
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/oC
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas
960
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA, (Figure 10)
-100
-
-
V
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = -250µA
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON) MAX,VGS = -10V
-19
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
VGS = -10V, ID = -10A, (Figures 8, 9)
-
0.14
0.20
Forward Transconductance (Note 2)
gfs
VDS ≤ -50V, ID = -10A, (Figure 12)
5.3
7.9
-
S
Turn-On Delay Time
td(ON)
VDD = -50V, ID ≈ -19A, RG = 9.1Ω, RL = 2.5Ω,
VGS = -10V, (Figures 17, 18)
MOSFET Switching Times Are Essentially Indepen-
dent of Operating Temperature
-
16
20
ns
Rise Time
tr
-
65
100
ns
Turn-Off Delay Time
td(OFF)
-47
70
ns
Fall Time
tf
-28
70
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS,
IG(REF) = -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Operating
Temperature
-37
55
nC
Gate to Source Charge
Qgs
-
8.7
-
nC
Gate to Drain “Miller” Charge
Qgd
-22-
nC
Input Capacitance
CISS
VGS = 0V, VDS = -25V, f = 1.0MHz, (Figure 11)
-
1200
-
pF
Output Capacitance
COSS
-
570
-
pF
Reverse Transfer Capacitance
CRSS
-
160
-
pF
Internal Drain Inductance
LD
Measured Between Contact
Screw on Header That Is
Closer to Source and Gate
Pins and Center of Die
Modified MOSFET
Symbol Showing the In-
ternal Device Induc-
tances
-
5.0
-
nH
Internal Source Inductance
LS
Measured From the Source
Pin, 6mm (0.25in) From
Header and Source Bond-
ing Pad
-13-
nH
Junction to Case
RθJC
-
-
0.83
oC/W
Junction to Ambient
RθJA
Free Air Operation
-
-
30
0C/W
LS
LD
G
D
S
IRFP9140


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