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IRFP9150 데이터시트(PDF) 1 Page - Intersil Corporation

부품명 IRFP9150
상세설명  25A, 100V, 0.150 Ohm, P-Channel Power MOSFET
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP9150 데이터시트(HTML) 1 Page - Intersil Corporation

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4-63
File Number
2293.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright
© Intersil Corporation 1999
IRFP9150
25A, 100V, 0.150 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon-gate power field effect transistor
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
The P-Channel IRFP9150 is an approximate electrical
complement to the N-channel IRFP150.
Formerly developmental type TA49230.
Features
• 25A, 100V
•rDS(ON) = 0.150Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP9150
TO-247
IRFP9150
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Data Sheet
August 1999


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