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IRFP9150 데이터시트(PDF) 2 Page - Intersil Corporation

부품명 IRFP9150
상세설명  25A, 100V, 0.150 Ohm, P-Channel Power MOSFET
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
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IRFP9150 데이터시트(HTML) 2 Page - Intersil Corporation

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4-64
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFP9150
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
-100
V
Drain to Gate Voltage (RGS = 10kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
-100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC =100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
-25
-18
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
-100
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/oC
Single Pulse Avalanche Energy Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas
1300
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA (Figure 10)
1
-
-
V
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = -250µA
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
-25
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
VGS = -10V, ID = -10A (Figure 8, 9)
-
0.090
0.150
Forward Transconductance (Note 2)
gfs
VDS ≤ -10V, ID = -12.5A (Figure 12)
4
10
-
S
Turn-On Delay Time
td(ON)
VDD = -50V, ID ≈ -25A, RG = 6.8Ω, RL = 2Ω
(Figures 17 and 18) MOSFET switching times are es-
sentially independent of operating temperature).
-
16
24
ns
Rise Time
tr
-
110
160
ns
Turn-Off Delay Time
td(OFF)
-
65
100
ns
Fall Time
tf
-46
70
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = -10V, ID = -25A, VDS = 0.8 x Rated BVDSS
Ig(REF) = -1.5mA (Figures 14, 19, 20)
(Gate Charge is Essentially Independent Of Operat-
ing Temperature)
-
82
120
nC
Gate to Source Charge
Qgs
-14
-
nC
Gate to Drain “Miller” Charge
Qgd
-42
-
nC
Input Capacitance
CISS
VGS = 0V, VDS = -25V, f = 1.0MHz
(Figure 11)
-
2400
-
pF
Output Capacitance
COSS
-
850
-
pF
Reverse Transfer Capacitance
CRSS
-
400
-
pF
Internal Drain Inductance
LD
Measured From the Drain
Lead, 6mm (0.25in) From
the Package to the Center
of the Die
Modified MOSFET
Symbol Showing the In-
ternal Device Induc-
tances
-
5.0
-
nH
Internal Source Inductance
LS
Measured From the Source
Pin, 6mm (0.25in) From
Header to the Source
Bonding Pad
-13
-
nH
Thermal Resistance Junction to Case
RθJC
-
-
0.83
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
-
30
0C/W
LS
LD
G
D
S
IRFP9150


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