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IRFP9240 데이터시트(PDF) 2 Page - Intersil Corporation

부품명 IRFP9240
상세설명  12A, 200V, 0.500 Ohm, P-Channel Power MOSFET
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFP9240 데이터시트(HTML) 2 Page - Intersil Corporation

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4-72
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFP9240
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
-200
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
-200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 125
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-12
-7.5
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
-48
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
790
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = -250µA, VGS = 0V (Figure 10)
-200
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250µA
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
-12
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = -6.3A, VGS = -10V (Figures 8, 9)
-
0.380
0.500
Forward Transconductance (Note 2)
gfs
VDS ≤ -50V, ID = -6.3A (Figure 12)
3.8
5.7
-
S
Turn-On Delay Time
td(ON)
VDD = -100V, ID ≈ -12A, RG = 9.1Ω,
VGS = -10V, RL = 7.6Ω, (Figures 17, 18)
MOSFET Switching Times are Essentially Indepen-
dent of Operating Temperature
-18
22
ns
Rise Time
tr
-45
68
ns
Turn-Off Delay Time
td(OFF)
-75
90
ns
Fall Time
tf
-29
44
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = -10V, ID = -12A, VDS = 0.8 x Rated BVDSS
Ig(REF) = -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Operat-
ing Temperature
-38
57
nC
Gate to Source Charge
Qgs
-8-
nC
Gate to Drain “Miller” Charge
Qgd
-21-
nC
Input Capacitance
CISS
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)
-
1400
-
pF
Output Capacitance
COSS
-
350
-
pF
Reverse Transfer Capacitance
CRSS
-
140
-
pF
Internal Drain Inductance
LD
Measured From the Con-
tact Screw on Header
Closer to Source and Gate
Pins to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured From the
Source Pin, 6mm (0.25in)
From Header to Source
Bonding Pad
-
12.5
-
nH
Thermal Resistance Junction to Case
RθJC
-
-
0.83
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
LS
LD
G
D
S
IRFP9240


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