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IRFP9240 데이터시트(PDF) 2 Page - Intersil Corporation |
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IRFP9240 데이터시트(HTML) 2 Page - Intersil Corporation |
2 / 7 page 4-72 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRFP9240 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS -200 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -200 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 125 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D -12 -7.5 A A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM -48 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 790 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V (Figure 10) -200 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2.0 - -4.0 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = -10V -12 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = -6.3A, VGS = -10V (Figures 8, 9) - 0.380 0.500 Ω Forward Transconductance (Note 2) gfs VDS ≤ -50V, ID = -6.3A (Figure 12) 3.8 5.7 - S Turn-On Delay Time td(ON) VDD = -100V, ID ≈ -12A, RG = 9.1Ω, VGS = -10V, RL = 7.6Ω, (Figures 17, 18) MOSFET Switching Times are Essentially Indepen- dent of Operating Temperature -18 22 ns Rise Time tr -45 68 ns Turn-Off Delay Time td(OFF) -75 90 ns Fall Time tf -29 44 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = -10V, ID = -12A, VDS = 0.8 x Rated BVDSS Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operat- ing Temperature -38 57 nC Gate to Source Charge Qgs -8- nC Gate to Drain “Miller” Charge Qgd -21- nC Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz (Figure 11) - 1400 - pF Output Capacitance COSS - 350 - pF Reverse Transfer Capacitance CRSS - 140 - pF Internal Drain Inductance LD Measured From the Con- tact Screw on Header Closer to Source and Gate Pins to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances - 5.0 - nH Internal Source Inductance LS Measured From the Source Pin, 6mm (0.25in) From Header to Source Bonding Pad - 12.5 - nH Thermal Resistance Junction to Case RθJC - - 0.83 oC/W Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 30 oC/W LS LD G D S IRFP9240 |
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