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IRFPG40 데이터시트(PDF) 1 Page - Intersil Corporation

부품명 IRFPG40
상세설명  4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFPG40 데이터시트(HTML) 1 Page - Intersil Corporation

  IRFPG40 Datasheet HTML 1Page - Intersil Corporation IRFPG40 Datasheet HTML 2Page - Intersil Corporation IRFPG40 Datasheet HTML 3Page - Intersil Corporation IRFPG40 Datasheet HTML 4Page - Intersil Corporation IRFPG40 Datasheet HTML 5Page - Intersil Corporation IRFPG40 Datasheet HTML 6Page - Intersil Corporation  
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4-365
File Number
2879.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright
© Intersil Corporation 1999
IRFPG40
4.3A, 1000V, 3.500 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09850.
Features
• 4.3A, 1000V
•rDS(ON) = 3.500Ω
• UIS SOA Rating Curve (Single Pulse)
• -55oC to 150oC Operating and Storage Temperature
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFPG40
TO-247
IRFPG40
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Data Sheet
July 1999


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