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IRFPG40 데이터시트(PDF) 1 Page - Intersil Corporation |
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IRFPG40 데이터시트(HTML) 1 Page - Intersil Corporation |
1 / 6 page 4-365 File Number 2879.2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFPG40 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09850. Features • 4.3A, 1000V •rDS(ON) = 3.500Ω • UIS SOA Rating Curve (Single Pulse) • -55oC to 150oC Operating and Storage Temperature Symbol Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBER PACKAGE BRAND IRFPG40 TO-247 IRFPG40 NOTE: When ordering, include the entire part number. G D S SOURCE DRAIN GATE DRAIN (TAB) Data Sheet July 1999 |
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