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IRFPG40 데이터시트(PDF) 2 Page - Intersil Corporation |
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IRFPG40 데이터시트(HTML) 2 Page - Intersil Corporation |
2 / 6 page 4-366 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRFPG40 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS 1000 V Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 1000 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 4.3 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 17 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 150 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/ oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 490 mJ Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 9) 1000 - V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 4.0 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150 oC - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 2.5A, VGS = 10V (Figures 7, 8) - 3.5 Ω Forward Transconductance (Note 2) gfs ID = 2.5A, VDS = 100V (Figure 11) 3.5 - S Turn-On Delay Time td(ON) VDD = 500V, I = 3.9A, RGS = 9.1Ω, RL = 120Ω VGS = 10V -30 ns Rise Time tr -50 ns Turn-Off Delay Time td(OFF) - 170 ns Fall Time tf -50 ns Total Gate Charge Qg(TOT) ID = 3.9A, VDS = 800V, VGS = 10V (Figure 13) - 120 nC Thermal Resistance Junction to Case RθJC - 0.83 oC/W Thermal Resistance Junction to Ambient RθJA Free Air Operation - 40 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Source to Drain Diode Voltage VSD ISD = 4.3A (Figure 12) - 1.8 V Reverse Recovery Time trr ISD = 3.9A, dlSD/dt = 100A/µs - 1000 ns NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. 4. VDD = 25V, starting TJ = 25 oC, L = 640µH, RG = 25Ω, peak IAS = 9.2A (Figure 3). IRFPG40 |
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