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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SI3475DV 데이터시트(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI3475DV 데이터시트(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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4 / 5 page  SMD Type www.kexin.com.cn 4 MOSFET . P-Channel MOSFET SI3475DV (KI3475DV) ■ Typical Characterisitics Source-Drain Diode Forward Voltage Threshold Voltage 10 1 0.01 VSD - Source-to-Drain Voltage (V) 0 0.3 0.6 0.9 1.2 1.5 0.10 T J = 150 °C T J = 25 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 5 µA TJ – Temperature (°C) ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.0 1.2 2.4 3.6 4.8 6.0 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C 0 36 60 12 24 Time (sec) 48 10 0.01 1 1 . 0 1 0 0 . 0 Safe Operating Area *VGS minimum VGS at which rDS(on) is specified 10 0.001 1 0.01 VDS – Drain-to-Source Voltage (V) 0.1 0.1 1 10 100 1000 *Limited by rDS(on) T = 25 °C Single Pulse 1 s 10 s dc 10 ms 100 ms 1 ms A Current Derating* 0 0.2 0.4 0.7 0.9 C – Case Temperature (°C) 0 25 50 75 100 125 150 1.1 T |
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