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IRFP054N 데이터시트(PDF) 2 Page - Kersemi Electronic Co., Ltd.

부품명 IRFP054N
상세설명  Advanced Process Technology
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제조업체  KERSEMI [Kersemi Electronic Co., Ltd.]
홈페이지  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRFP054N 데이터시트(HTML) 2 Page - Kersemi Electronic Co., Ltd.

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IRFP054N
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 43A, VGS = 0V
„
trr
Reverse Recovery Time
–––
81
120
ns
TJ = 25°C, IF = 43A
Qrr
Reverse RecoveryCharge
–––
240
370
nC
di/dt = 100A/µs
„…
Source-Drain Ratings and Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.06
–––
V/°C
Reference to 25°C, ID = 1mA
…
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.012
VGS = 10V, ID = 43A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
30
–––
–––
S
VDS = 25V, ID = 43A
…
–––
–––
25
µA
VDS = 55V, VGS = 0V
–––
–––
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
130
ID = 43A
Qgs
Gate-to-Source Charge
–––
–––
23
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
53
VGS = 10V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 28V
tr
Rise Time
–––
66
–––
ID = 43A
td(off)
Turn-Off Delay Time
–––
40
–––
RG = 3.6
tf
Fall Time
–––
46
–––
RD = 0.62Ω, See Fig. 10
„…
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
2900 –––
VGS = 0V
Coss
Output Capacitance
–––
880
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
330
–––
ƒ = 1.0MHz, See Fig. 5
…
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
5.0
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 43A, di/dt ≤ 260A/µs, VDD≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
‚ VDD = 25V, starting TJ = 25°C, L = 390µH
RG = 25Ω, IAS = 43A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
81
†
290
A
13
† Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
… Uses IRF1010N data and test conditions
2014-8-14
2
www.kersemi.com


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