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IRFP4468 데이터시트(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRFP4468 데이터시트(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 8 page S D G Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.0 2.6 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 0.8 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 310 ––– ––– S Qg Total Gate Charge ––– 360 540 nC Qgs Gate-to-Source Charge ––– 81 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 89 Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 270 ––– td(on) Turn-On Delay Time ––– 52 ––– ns tr Rise Time ––– 230 ––– td(off) Turn-Off Delay Time ––– 160 ––– tf Fall Time ––– 260 ––– Ciss Input Capacitance ––– 19860 ––– pF Coss Output Capacitance ––– 1360 ––– Crss Reverse Transfer Capacitance ––– 540 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1550 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 900 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 290c A (Body Diode) ISM Pulsed Source Current ––– ––– 1120 A (Body Diode) d VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 100 ns TJ = 25°C VR = 85V, ––– 110 TJ = 125°C IF = 180A Qrr Reverse Recovery Charge ––– 370 nC TJ = 25°C di/dt = 100A/μs g ––– 420 TJ = 125°C IRRM Reverse Recovery Current ––– 6.9 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ID = 180A RG = 2.7Ω VGS = 10V g VDD = 65V ID = 180A, VDS =0V, VGS = 10V TJ = 25°C, IS = 180A, VGS = 0V g integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5mA d VGS = 10V, ID = 180A g VDS = VGS, ID = 250μA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C MOSFET symbol showing the VDS =50V Conditions VGS = 10V g VGS = 0V VDS = 50V ƒ = 100 kHz, See Fig. 5 VGS = 0V, VDS = 0V to 80V i, See Fig. 11 VGS = 0V, VDS = 0V to 80V h Conditions VDS = 50V, ID = 180A ID = 180A VGS = 20V VGS = -20V IRFP4468PBF 2014-8-14 2 www.kersemi.com |
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