SBYV26C datasheet(1/2 Pages) SUNMATE

부품명	SBYV26C

상세설명	1.0A Axial Leaded Ultra Fast Rectifier

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제조업체	SUNMATE [SUNMATE electronic Co., LTD]

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Features

A

B

C

D

DO-41

Dim

Min

Max

A

25.40

¾

B

4.06

5.21

C

0.71

0.864

D

2.00

2.72

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

·

Mechanical Data

·

High temperature metallurgically bonded construction

Cavity-free glass passivated junction

Ultrafast recovery time for high efficiency

Low forward voltage, high current capability

Capable of meeting environmental standards of

MIL-S-19500

Hermetically sealed package

Low leakage current • High surge current capability

Specified reverse surge capability

High temperature soldering guaranteed: 350°C/10 seconds,

0.375" (9.5mm) lead length,5 lbs. (2.3kg) tension

·

JEDEC DO-41, molded plastic over glass body

Case:

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.012 oz., 0.3 g

Parameter

Symbol

Value

Unit

Maximum repetitive peak reverse voltage

VRRM

600

V

Maximum RMS voltage

VRMS

420

V

Maximum DC blocking voltage

VDC

600

V

Maximum average forward rectified current

0.375" (9.5mm) lead length at TL = 85°C (See Fig. 1)

IF(AV)

1.0

A

Peak forward surge current 10ms single half

sine-wave superimposed on rated load

IFSM

30

A

Non repetitive peak reverse energy (Note 1)

ERSM

5mJ

Typical thermal resistance (Note 2,3)

R

ΘJA

70

R

ΘJL

16

°C/W

Operating junction and storage temperature range

TJ, TSTG

–65 to +175

°C

Minimum avalanche breakdown voltage at 100

µAVBR

600

V

Maximum instantaneous

TJ = 25°C

VF

2.5

V

forward voltage at 1.0A

TJ = 175°C

1.3

Maximum DC reverse current

TA = 25°C

IR

5.0

µA

at rated DC blocking voltage

TA = 165°C

150

Max. reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A

trr

30

ns

Maximum junction capacitance at 4.0V, 1MHz

CJ

45

pF

Maximum reverse recovery current slope

dir/dt

7

A/

µs

at IF = 1A, VR = 30V, dif/dt = –1A/

µs

Notes: (1) Peak reverse energy measured with 8/20

µs surge

(2) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads

(3) Thermal resistance from junction to lead at 0.375” (9.5mm) lead length with both leads attached to heatsink

SBYV26C

1.0A Axial Leaded Ultra Fast Rectifier

유사한 부품 번호 - SBYV26C

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Vishay Siliconix	SBYV26C	30Kb / 2P	Glass Passivated Ultrafast Rectifier 11-Feb-02
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Gulf Semiconductor	SBYV26C	101Kb / 2P	SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE竊?200 to 1400V CURRENT: 1.0A
Vishay Siliconix	SBYV26C	80Kb / 5P	Glass Passivated Ultrafast Rectifier Revision: 15-Mar-11
Shenzhen Taychipst Elec...	SBYV26C	15Mb / 2P	Glass Passivated Ultrafast Rectifier

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