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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SA1648 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SA1648 데이터시트(HTML) 4 Page - Renesas Technology Corp |
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4 / 7 page  Data Sheet D16121EJ4V0DS 2 2SA1648,1648-Z ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector to emitter voltage VCEO(SUS) IC = −3.0 A, IB = −0.3 A, L = 1 mH −60 V Collector to emitter voltage VCEX(SUS) IC = −3.0 A, IB2 = −IB1 = −0.3 A, VBE(OFF) = 1.5 V, L = 180 μH, clamped −60 V Collector cutoff current ICBO VCE = −60 V, IE = 0 A −10 μA Collector cutoff current ICER VCE = −60 V, RBE = 50 Ω, TA = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −60 V, VBE(OFF) = 1.5 V −10 μA Collector cutoff current ICEX2 VCE = −60 V, VBE(OFF) = 1.5 V, TA = 125 °C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 A −10 μA DC current gain hFE1 Note VCE = −2.0 V, IC = −0.5 A 100 DC current gain hFE2 Note VCE = −2.0 V, IC = −1.0 A 100 200 400 DC current gain hFE3 Note VCE = −2.0 V, IC = −3.0 A 60 Collector saturation voltage VCE(sat)1 Note IC = −3.0 A, IB = −0.15 A −0.3 V Collector saturation voltage VCE(sat)2 Note IC = −4.0 A, IB = −0.2 A −0.5 V Base saturation voltage VBE(sat)1 Note IC = −3.0 A, IB = −0.15 A −1.2 V Base saturation voltage VBE(sat)2 Note IC = −4.0 A, IB = −0.2 A −1.5 V Collector capacitance Cob VCB = −10 V, IE = 0 A, f = 1.0 MHz 80 pF Gain bandwidth product fT VCE = −10 V, IC = 0.5 A 90 MHz Turn-on time ton 0.3 μs Storage time tstg 1.5 μs Fall time tf IC = −3.0 A, RL = 17 Ω, IB1 = −IB2 = −0.15 A, VCC ≅ −50 V Refer to SWITCHING TIME TEST CIRCUIT. 0.3 μs Note Pulse test PW ≤ 350 μs, Duty Cycle ≤ 2%/Pulsed hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME TEST CIRCUIT VIN PW PW ≅ 50 Duty Cycle ≤ 2% VBB ≅ 5 V VCC ≅ −50 V 10% 90% RL = 17 Ω IB1 IC IB2 IB1 IC ton tstg tf TUT IB2 s μ Base current waveform Collector current waveform |
유사한 부품 번호 - 2SA1648_15 |
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유사한 설명 - 2SA1648_15 |
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