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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF3315 데이터시트(PDF) 2 Page - International Rectifier |
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IRF3315 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF3315 APPROVED 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.187 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.07 Ω VGS = 10V, ID = 12A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 11.4 ––– ––– S VDS = 50V, ID = 12A ––– ––– 25 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 95 ID = 12A Qgs Gate-to-Source Charge ––– ––– 11 nC VDS = 120V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 47 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 9.6 ––– VDD = 75V tr Rise Time ––– 32 ––– ID = 12A td(off) Turn-Off Delay Time ––– 49 ––– RG = 5.1Ω tf Fall Time ––– 38 ––– RD = 5.9Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1300 ––– VGS = 0V Coss Output Capacitance ––– 300 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 12A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Starting T J = 25°C, L = 4.9mH RG = 25 Ω, IAS = 12A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 12A, VGS = 0V trr Reverse Recovery Time ––– 174 260 ns TJ = 25°C, IF = 12A Qrr Reverse Recovery Charge ––– 1.2 1.7 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 27 108 A |
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