IRF3808

Designed specifically for Automotive applications, this Advanced

Planar Stripe HEXFET ® Power MOSFET utilizes the latest process-

ing techniques to achieve extremely low on-resistance per silicon

area. Additional features of this HEXFET power MOSFET are a 175°C

junction operating temperature, low R

θJC, fast switching speed and

improved repetitive avalanche rating. This combination makes the

design an extremely efficient and reliable choice for use in higher

power Automotive electronic systems and a wide variety of other

applications.

S

D

G

Parameter

Max.

Units

140

V

97

V

A

Pulsed Drain Current

Q

550

Power Dissipation

330

W

Linear Derating Factor

2.2

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

R

430

mJ

Avalanche Current

Q

82

A

Repetitive Avalanche Energy

W

See Fig.12a, 12b, 15, 16

mJ

dv/dt

Peak Diode Recovery dv/dt

S

5.5

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting Torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.45

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

Thermal Resistance

V

Description

02/06/02

www.irf.com

1

q

Advanced Process Technology

q

Ultra Low On-Resistance

q

Dynamic dv/dt Rating

q

175°C Operating Temperature

q

Fast Switching

q

Repetitive Avalanche Allowed up to Tjmax

Benefits

Typical Applications

q

Integrated Starter Alternator

q

42 Volts Automotive Electrical Systems

AUTOMOTIVE MOSFET

PD - 94291B

TO-220AB

HEXFET(R) is a registered trademark of International Rectifier.