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IRF5NJ6215 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF5NJ6215
상세설명  POWER MOSFET P-CHANNEL(Vdss=-150V, Rds(on)=0.29ohm, Id=-11A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF5NJ6215 데이터시트(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -10V, TC = 25°C
Continuous Drain Current
-11
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
-7.2
IDM
Pulsed Drain Current ➀
-44
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
130
mJ
IAR
Avalanche Current ➀
-11
A
EAR
Repetitive Avalanche Energy ➀
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
10
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Package Mounting Surface Temperature
300 (for 5 s)
Weight
1.0 (Typical)
g
oC
A
9/11/01
www.irf.com
1
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRF5NJ6215
-150V
0.29
-11A
For footnotes refer to the last page
HEXFET® POWER MOSFET
IRF5NJ6215
SURFACE MOUNT (SMD-0.5)
150V, P-CHANNEL
Fifth Generation HEXFET®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
PD - 94284A


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