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IRF7663 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRF7663
상세설명  Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF7663 데이터시트(HTML) 2 Page - International Rectifier

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IRF7663
2
www.irf.com
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -7.0A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
70
105
ns
TJ = 25°C, IF = -2.5A
Qrr
Reverse RecoveryCharge
–––
50
75
nC
di/dt = 100A/µs
‚
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
-66
-1.8
A
ƒ When mounted on 1 inch square copper board, t<10 sec
S
D
G
„ Starting T
J = 25°C, L = 17.8mH
RG = 25Ω, IAS = -3.6A. (See Figure 10)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
–––
–––
V
VGS = 0V, ID = -250uA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
-0.01
–––
V/°C
Reference to 25°C, ID = -1mA
–––
––– 0.020
VGS = -4.5V, ID = -7.0A
‚
–––
––– 0.040
VGS = -2.5V, ID = -5.1A
‚
VGS(th)
Gate Threshold Voltage
-0.60
–––
-1.2
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
14.5
–––
–––
S
VDS = -10V, ID = -7.0A
–––
–––
-1.0
VDS = -16V, VGS = 0V
–––
–––
-25
VDS = -16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -12V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 12V
Qg
Total Gate Charge
–––
30
45
ID = -6.0A
Qgs
Gate-to-Source Charge
–––
5.0
7.5
nC
VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
7.0
10.5
VGS = -5.0V
‚
td(on)
Turn-On Delay Time
–––
11
–––
VDD = -10V
tr
Rise Time
–––
100
–––
ID = -6.0A
td(off)
Turn-Off Delay Time
–––
125
–––
RG = 6.2Ω
tf
Fall Time
–––
172
–––
RD = 1.64Ω
‚
Ciss
Input Capacitance
–––
2520
–––
VGS = 0V
Coss
Output Capacitance
–––
615
–––
pF
VDS = -10V
Crss
Reverse Transfer Capacitance
–––
375
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.


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