IRF840LCS datasheet(2/10 Pages) IRF

부품명	IRF840LCS

상세설명	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

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제조업체	IRF [International Rectifier]

홈페이지	http://www.irf.com

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2 / 10 page

IRF840LCS/LCL

2

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

2.0

V

TJ = 25°C, IS = 8.0A, VGS = 0V

trr

Reverse Recovery Time

–––

490

740

ns

TJ = 25°C, IF = 8.0A

Qrr

Reverse Recovery Charge

–––

3.0

4.5

µC

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Starting T

J = 25°C, L = 14mH

RG = 25Ω, IAS = 8.0A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

Notes:

I

SD ≤ 8.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Uses IRF840LC data and test conditions

** When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended soldering techniques refer to application note #AN-994.

S

D

G

Source-Drain Ratings and Characteristics

8.0

28

A

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

500

–––

V

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.63

–––

V/°C

Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

0.85

Ω

VGS = 10V, ID = 4.8A

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

4.0

–––

S

VDS = 50V, ID = 4.8A

–––

25

µA

VDS = 500V, VGS = 0V

–––

250

VDS = 400V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

nA

VGS = -20V

Qg

Total Gate Charge

–––

39

ID = 8.0A

Qgs

Gate-to-Source Charge

–––

10

nC

VDS = 400V

Qgd

Gate-to-Drain ("Miller") Charge

–––

19

VGS = 10V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

–––

12

–––

VDD = 250V

tr

Rise Time

–––

25

–––

ID = 8.0A

td(off)

Turn-Off Delay Time

–––

27

–––

RG = 9.1Ω

tf

Fall Time

–––

19

–––

RD = 30Ω, See Fig. 10

Between lead,

–––

and center of die contact

Ciss

Input Capacitance

–––

1100 –––

VGS = 0V

Coss

Output Capacitance

–––

170

–––

pF

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

18

–––

ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

ns

IDSS

Drain-to-Source Leakage Current

nH

7.5

LS

Internal Source Inductance

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IRF840LCS 데이터시트(PDF) 2 Page - International Rectifier

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