전자부품 데이터시트 검색엔진 |
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IRFP044N 데이터시트(PDF) 4 Page - International Rectifier |
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IRFP044N 데이터시트(HTML) 4 Page - International Rectifier |
4 / 8 page IRFP044N Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 400 800 1200 1600 2000 2400 2800 1 10 100 DS V , Drai n-to -So urce V oltag e (V) A V = 0 V, f = 1M H z C = C + C , C SH O RTE D C = C C = C + C GS is s gs gd ds rs s gd o ss ds g d C is s C os s C rs s 0 4 8 12 16 20 0 102030405060 Q , T ota l G ate Ch arge (n C) G A FO R TEST CIRCUIT SEE FIG UR E 13 V = 44 V V = 28 V I = 28 A D DS DS 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 T = 25 °C J V = 0 V GS V , S ource -to-D rain Voltage (V ) SD A T = 175°C J 1 10 100 1000 1 10 100 V , D rain-to -Source V o ltage (V ) DS O P ER A TION IN TH IS A R EA L IM ITE D B Y R DS (o n) 10 µs 10 0µ s 1m s 10 m s A T = 25 °C T = 17 5 °C S ingle Pu ls e C J |
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