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IRFP044N 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP044N
상세설명  Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP044N 데이터시트(HTML) 1 Page - International Rectifier

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IRFP044N
HEXFET® Power MOSFET
PD - 9.1410A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
S
D
G
VDSS = 55V
RDS(on) = 0.020Ω
ID = 53A
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
TO-247AC
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
53
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
37
A
IDM
Pulsed Drain Current
…
180
PD @TC = 25°C
Power Dissipation
120
W
Linear Derating Factor
0.77
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚…
230
mJ
IAR
Avalanche Current

28
A
EAR
Repetitive Avalanche Energy

12
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.3
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
8/25/97


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