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IRFP054V 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP054V
상세설명  Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A??
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP054V 데이터시트(HTML) 1 Page - International Rectifier

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IRFP054V
HEXFET® Power MOSFET
3/30/01
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.85
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
www.irf.com
1
VDSS = 60V
RDS(on) = 9.0mΩ
ID = 93A
ˆ
S
D
G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
Description
PD - 94110
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
93
ˆ
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
66
A
IDM
Pulsed Drain Current
‡
360
PD @TC = 25°C
Power Dissipation
180
W
Linear Derating Factor
1.2
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

90
A
EAR
Repetitive Avalanche Energy

18
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ‡
4.7
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
TO-247AC


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