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IRFP140N 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP140N
상세설명  Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP140N 데이터시트(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
IRFP140N
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
10/5/98
VDSS = 100V
RDS(on) = 0.052Ω
ID = 33A
S
D
G
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case
––––
––––
1.1
RθCS
Case-to-Sink, Flat, Greased Surface
––––
0.24
––––
°C/W
RθJA
Junction-to-Ambient
––––
––––
40
Thermal Resistance
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
…
33
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V…
23
A
IDM
Pulsed Drain Current
…
110
PD @TC = 25°C
Power Dissipation
140
W
Linear Derating Factor
0.91
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
‚…
300
mJ
IAR
Avalanche Current

16
A
EAR
Repetitive Avalanche Energy

14
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
TO-247AC
www.irf.com
1
PD - 91343B


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