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IRFP140N 데이터시트(PDF) 2 Page - International Rectifier |
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IRFP140N 데이터시트(HTML) 2 Page - International Rectifier |
2 / 8 page IRFP140N 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.052 Ω VGS = 10V, ID = 16A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 11 ––– ––– S VDS = 50V, ID = 16A ––– ––– 25 VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 94 ID = 16A Qgs Gate-to-Source Charge ––– ––– 15 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 43 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 8.2 ––– VDD = 50V tr Rise Time ––– 39 ––– ID = 16A td(off) Turn-Off Delay Time ––– 44 ––– RG = 5.1Ω tf Fall Time ––– 33 ––– RD = 3.0Ω, See Fig. 10
Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1400 ––– VGS = 0V Coss Output Capacitance ––– 330 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5 nH µA nA IDSS Drain-to-Source Leakage Current IGSS LS Internal Source Inductance ––– ––– ns S D G 5.0 13 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ––– LD Internal Drain Inductance ––– ––– ––– Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. VDD = 25V, starting TJ = 25°C, L = 2.0mH RG = 25Ω, IAS = 16A. (See Figure 12) Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode)
p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time ––– 170 250 ns TJ = 25°C, IF = 16A Qrr Reverse RecoveryCharge ––– 1.1 1.6 µC di/dt = 100A/µs
Source-Drain Ratings and Characteristics A ––– ––– 110 ––– ––– 33 S D G
Uses IRF540N data and test conditions. |
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