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IRFP150N 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP150N
상세설명  Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP150N 데이터시트(HTML) 2 Page - International Rectifier

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IRFP150N
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
D
V(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
–––
0.11
–––
V/°C
Reference to 25°C, ID = 1mA
…
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.036
W
VGS = 10V, ID = 23A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
14
–––
–––
S
VDS = 25V, ID = 22A
…
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
110
ID = 22A
Qgs
Gate-to-Source Charge
–––
–––
15
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
58
VGS = 10V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 50V
tr
Rise Time
–––
56
–––
ID = 22A
td(off)
Turn-Off Delay Time
–––
45
–––
RG = 3.6W
tf
Fall Time
–––
40
–––
RD = 2.9W, See Fig. 10
„…
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
1900 –––
VGS = 0V
Coss
Output Capacitance
–––
450
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
230
–––
ƒ = 1.0MHz, See Fig. 5
…
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
5.0
IDSS
Drain-to-Source Leakage Current
13
‚ Starting TJ = 25°C, L = 1.7mH
RG = 25W , IAS = 22A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
ƒ I
SD £ 22A, di/dt £ 180A/µs, V
DD £ V(BR)DSS,
TJ £ 175°C
„ Pulse width £ 300µs; duty cycle £ 2%.
… Uses IRF1310N data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
…
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS =23A, VGS = 0V
„
trr
Reverse Recovery Time
–––
180
270
ns
TJ = 25°C, IF = 22A
Qrr
Reverse RecoveryCharge
–––
1.2
1.8
µC
di/dt = 100A/µs
„…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
42
140
S
D
G


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