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IRFP17N50L 데이터시트(PDF) 1 Page - International Rectifier |
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IRFP17N50L 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page IRFP17N50L 09/20/01 www.irf.com 1 SMPS MOSFET HEXFET® Power MOSFET Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 16 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 11 A IDM Pulsed Drain Current 64 PD @TC = 25°C Power Dissipation 220 W Linear Derating Factor 1.8 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 13 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Benefits Applications Mounting Torque, 6-32 or M3 screw lbft.in(N.m) 10 l Switch Mode Power Supply (SMPS) l Zero Voltage Switching (ZVS) and High Frequency Circuit l Uninterruptible Power Supply l High Speed Power Switching l PWM Inverters l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low Trr and Soft Diode Recovery l High Performance Optimised Anti-parallel Diode S D G Diode Characteristics A Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current 16 MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current 64 integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 16A, VGS = 0V ––– 170 250 TJ = 25°C IF = 16A ––– 220 330 TJ = 125°C di/dt = 100A/µs ––– 470 710 TJ = 25°C ––– 810 1210 TJ = 125°C IRRM Reverse Recovery Current ––– 7.3 11 A ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) trr Reverse Recovery Time Qrr Reverse Recovery Charge ns nC TO-247AC VDSS RDS(on) typ. Trr typ. ID 500V 0.28 Ω 170ns 16A PD - 94322 |
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