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IRFP22N50A 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP22N50A
상세설명  Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=22A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP22N50A 데이터시트(HTML) 2 Page - International Rectifier

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IRFP22N50A
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Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
12
–––
–––
S
VDS = 50V, ID = 13A
Qg
Total Gate Charge
–––
–––
120
ID = 22A
Qgs
Gate-to-Source Charge
–––
–––
32
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
52
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
26
–––
VDD = 250V
tr
Rise Time
–––
94
–––
ID = 22A
td(off)
Turn-Off Delay Time
–––
47
–––
RG = 4.3Ω
tf
Fall Time
–––
47
–––
RD = 11Ω,See Fig. 10
„
Ciss
Input Capacitance
–––
3450 –––
VGS = 0V
Coss
Output Capacitance
–––
513
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
27
–––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
4935 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
137
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
264
–––
VGS = 0V, VDS = 0V to 400V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
1180
mJ
IAR
Avalanche Current

–––
22
A
EAR
Repetitive Avalanche Energy

–––
28
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS = 22A, VGS = 0V
„
trr
Reverse Recovery Time
–––
570
850
ns
TJ = 25°C, IF = 22A
Qrr
Reverse RecoveryCharge
–––
6.1
9.2
µC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
22
88
A
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.45
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.55
–––
V/°C
Reference to 25°C, ID = 1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.23
VGS = 10V, ID = 13A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 500V, VGS = 0V
–––
–––
250
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current


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