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IRFP23N50L 데이터시트(PDF) 1 Page - International Rectifier |
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IRFP23N50L 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page IRFP23N50L 11/28/01 www.irf.com 1 SMPS MOSFET HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching l Motor Drive Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 15 A IDM Pulsed Drain Current 92 PD @TC = 25°C Power Dissipation 370 W Linear Derating Factor 2.9 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 14 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings TO-247AC Typical SMPS Topologies l Bridge Converters l All Zero Voltage Switching S D G Diode Characteristics A Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 23 MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 92 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 14A, VGS = 0V ––– 170 250 TJ = 25°C IF = 23A ––– 220 330 TJ = 125°C di/dt = 100A/µs ––– 560 840 nC TJ = 25°C ––– 980 1500 nC TJ = 125°C IRRM Reverse Recovery Current ––– 7.6 11 A ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) trr Reverse Recovery Time Qrr Reverse Recovery Charge ns VDSS RDS(on) typ. Trr typ. ID 500V 0.190 Ω 170ns 23A PD - 94230 |
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