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IRFP254N 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP254N
상세설명  Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP254N 데이터시트(HTML) 1 Page - International Rectifier

  IRFP254N Datasheet HTML 1Page - International Rectifier IRFP254N Datasheet HTML 2Page - International Rectifier IRFP254N Datasheet HTML 3Page - International Rectifier IRFP254N Datasheet HTML 4Page - International Rectifier IRFP254N Datasheet HTML 5Page - International Rectifier IRFP254N Datasheet HTML 6Page - International Rectifier IRFP254N Datasheet HTML 7Page - International Rectifier IRFP254N Datasheet HTML 8Page - International Rectifier  
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Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
23
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
16
A
IDM
Pulsed Drain Current

92
PD @TC = 25°C
Power Dissipation
220
W
Linear Derating Factor
1.5
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
300
mJ
IAR
Avalanche Current

14
A
EAR
Repetitive Avalanche Energy

22
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
7.4
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
IRFP254N
HEXFET® Power MOSFET
7/20/01
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.68
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
www.irf.com
1
VDSS = 250V
RDS(on) = 125mΩ
ID = 23A
S
D
G
PD - 94213
Absolute Maximum Ratings
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
TO-247AC


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