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IRFP260N 데이터시트(PDF) 1 Page - International Rectifier |
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IRFP260N 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page IRFP260N HEXFET® Power MOSFET 10/11/00 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A IDM Pulsed Drain Current 200 PD @TC = 25°C Power Dissipation 300 W Linear Derating Factor 2.0 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 560 mJ IAR Avalanche Current 50 A EAR Repetitive Avalanche Energy 30 mJ dv/dt Peak Diode Recovery dv/dt 10 V/ns TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.50 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance www.irf.com 1 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Description VDSS = 200V RDS(on) = 0.04Ω ID = 50A S D G l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements TO-247AC PD - 94004A |
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