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IRFP264N 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP264N
상세설명  Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP264N 데이터시트(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
44
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
31
A
IDM
Pulsed Drain Current

170
PD @TC = 25°C
Power Dissipation
380
W
Linear Derating Factor
2.6
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
520
mJ
IAR
Avalanche Current

25
A
EAR
Repetitive Avalanche Energy

38
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
8.7
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
IRFP264N
HEXFET® Power MOSFET
5/4/01
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.39
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
www.irf.com
1
VDSS = 250V
RDS(on) = 60mΩ
ID = 44A
S
D
G
PD - 94214
Absolute Maximum Ratings
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
TO-247AC


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