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IRFP2907 데이터시트(PDF) 2 Page - International Rectifier |
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IRFP2907 데이터시트(HTML) 2 Page - International Rectifier |
2 / 9 page IRFP2907 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.085 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 3.6 4.5 m Ω VGS = 10V, ID = 125A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA gfs Forward Transconductance 130 ––– ––– S VDS = 25V, ID = 125A ––– ––– 20 µA VDS = 75V, VGS = 0V ––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Qg Total Gate Charge ––– 410 620 ID = 125A Qgs Gate-to-Source Charge ––– 92 140 nC VDS = 60V Qgd Gate-to-Drain ("Miller") Charge ––– 140 210 VGS = 10V td(on) Turn-On Delay Time ––– 23 ––– VDD = 38V tr Rise Time ––– 190 ––– ID = 125A td(off) Turn-Off Delay Time ––– 130 ––– RG = 1.2Ω tf Fall Time ––– 130 ––– VGS = 10V Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 13000 ––– VGS = 0V Coss Output Capacitance ––– 2100 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 500 ––– ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 9780 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 1360 ––– VGS = 0V, VDS = 60V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 2320 ––– VGS = 0V, VDS = 0V to 60V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 5.0 13 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25°C, L = 0.25mH RG = 25Ω, IAS = 125A. (See Figure 12). ISD ≤ 125A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 125A, VGS = 0V trr Reverse Recovery Time ––– 140 210 ns TJ = 25°C, IF = 125A Qrr Reverse RecoveryCharge ––– 880 1320 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 209 840 A
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. |
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