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IRFP31N50L 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP31N50L
상세설명  Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP31N50L 데이터시트(HTML) 2 Page - International Rectifier

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Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
15
–––
–––
SVDS = 50V, ID = 19A
„
Qg
Total Gate Charge
–––
–––
210
ID = 31A
Qgs
Gate-to-Source Charge
–––
–––
58
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
100
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
28
–––
VDD = 250V
tr
Rise Time
–––
115
–––
ID = 31A
td(off)
Turn-Off Delay Time
–––
54
–––
RG = 4.3Ω
tf
Fall Time
–––
53
–––
VGS = 10V,See Fig. 10
„
Ciss
Input Capacitance
–––
5000 –––
VGS = 0V
Coss
Output Capacitance
–––
553
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
59
–––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
6630 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
155
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
276
–––
VGS = 0V, VDS = 0V to 400V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.28
–––
V/°C
Reference to 25°C, ID = 1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.15 0.18
VGS = 10V, ID = 19A
„
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
–––
–––
50
µA
VDS = 500V, VGS = 0V
–––
–––
2.0
mA
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
ƒ I
SD = 31A, di/dt ≤ 422A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
Notes:
‚ Starting T
J = 25°C, L = 1mH, RG = 25Ω,
IAS = 31A (See Figure 12a).
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
460
mJ
IAR
Avalanche Current

–––
31
A
EAR
Repetitive Avalanche Energy

–––
46
mJ
Avalanche Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.26
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance


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