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IRFP31N50L 데이터시트(PDF) 1 Page - International Rectifier |
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1 / 8 page IRFP31N50L 05/23/01 SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) typ. ID 500V 0.15 Ω 31A Benefits Applications TO-247AC l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low Trr and Soft Diode Recovery l High Performance Optimised Anti-parallel Diode Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 20 A IDM Pulsed Drain Current 124 PD @TC = 25°C Power Dissipation 460 W Linear Derating Factor 3.7 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 19 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings www.irf.com 1 S D G Diode Characteristics A Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 31 MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 124 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 31A, VGS = 0V ––– 170 250 TJ = 25°C IF = 31A ––– 220 330 TJ = 125°C di/dt = 100A/µs ––– 570 860 nC TJ = 25°C ––– 1.2 1.8 µC TJ = 125°C IRRM Reverse Recovery Current ––– 7.9 12 A ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) trr Reverse Recovery Time Qrr Reverse Recovery Charge ns Typical SMPS Topologies l Bridge Converters l All Zero Voltage Switching PD - 94081 |
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