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IRFP360LC 데이터시트(PDF) 2 Page - International Rectifier |
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IRFP360LC 데이터시트(HTML) 2 Page - International Rectifier |
2 / 8 page IRFP360LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 23A, VGS = 0V trr Reverse Recovery Time ––– 400 600 ns TJ = 25°C, IF = 23A Qrr Reverse Recovery Charge ––– 5.7 8.6 µC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting T J = 25°C, L = 4.0mH RG = 25Ω, IAS = 23A. (See Figure 12) ISD ≤ 23A, di/dt ≤ 170A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 400 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.49 ––– V/°C Reference to 25°C, I D = 1mA RDS(ON) Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 10V, ID = 14A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 13 ––– ––– S VDS = 50V, ID = 14A ––– ––– 25 VDS = 400V, VGS = 0V ––– ––– 250 VDS = 320V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 110 ID = 23A Qgs Gate-to-Source Charge ––– ––– 28 nC VDS = 320V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 45 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 16 ––– VDD = 200V tr Rise Time ––– 75 ––– ID = 23A td(off) Turn-Off Delay Time ––– 42 ––– RG = 4.3Ω tf Fall Time ––– 50 ––– RD = 7.9Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3400 ––– VGS = 0V Coss Output Capacitance ––– 540 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 42 ––– ƒ = 1.0MHz, See Fig. 5 Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD) ––– ––– 92 ––– ––– 23 A nH LD Internal Drain Inductance ––– 5.0 ––– LS Internal Source Inductance ––– 13 ––– IDSS Drain-to-Source Leakage Current IGSS ns µA nA Next Data Sheet Index Previous Datasheet To Order |
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